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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
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- Suvar, Erdal (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Haralson, Erik (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Radamson, Henry H. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- (creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
- In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:1-4, s. 336-340
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- SiGeC
- HBT
- bipolar
- selective epitaxial growth
- chemical-mechanical polishing
- leakage
- epitaxy
- si
Publication and Content Type
- ref (subject category)
- art (subject category)
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