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  • Tu, LiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)

A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

  • Article/chapterEnglish2018

Publisher, publication year, extent ...

  • 2018
  • Royal Society of Chemistry,2018
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-236031
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-236031URI
  • https://doi.org/10.1039/c8ra04403aDOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20181012
  • In thiswork, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (similar to 50 fJ mu m(-2) per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 x 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Yuan, SijianFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Xu, JiaweiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Yang, KunlongKTH,Skolan för elektroteknik och datavetenskap (EECS),Royal Inst Technol, Sch Technol & Hlth, SE-10044 Stockholm, Sweden.(Swepub:kth)u1mv2maf (author)
  • Wang, PengfeiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Cui, XiaoleiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Zhang, XinNanjing Tech Univ, Key Lab Flexible Elect, Nanjing 211800, Jiangsu, Peoples R China.;Nanjing Tech Univ, Inst Adv Mat, Nanjing 211800, Jiangsu, Peoples R China. (author)
  • Wang, JiaoFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Zhan, Yi-QiangFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Zheng, Li-RongFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. (author)
  • Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.Skolan för elektroteknik och datavetenskap (EECS) (creator_code:org_t)

Related titles

  • In:RSC Advances: Royal Society of Chemistry8:47, s. 26549-265532046-2069

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