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4H-SiC pMOSFETs wit...
4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts
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- Kajihara, J. (author)
- Japan
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- Kuroki, S. -I (author)
- Japan
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- Ishikawa, S. (author)
- Japan
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- Maeda, T. (author)
- Japan
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- Sezaki, H. (author)
- japan
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- Makino, T. (author)
- Japan
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- Ohshima, T. (author)
- japan
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- Östling, Mikael (author)
- KTH,Skolan för elektroteknik och datavetenskap (EECS)
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- Zetterling, Carl-Mikael, 1966- (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Trans Tech Publications, 2018
- 2018
- English.
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In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017. - : Trans Tech Publications. - 9783035711455 ; , s. 423-427
- Related links:
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https://www.mrs.org/...
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
Close
- 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200°C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni stack, Nb-Ni Alloy, Ni and Nb/Ti were investigated, and the Nb/Ni stack silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- 4H-SiC
- Harsh environment electronics
- Nickel
- Niobium
- Ohmic contact
- pMOSFET
- Binary alloys
- Electric contactors
- MOSFET devices
- Nickel alloys
- Niobium alloys
- Ohmic contacts
- Silicides
- Titanium alloys
- Al doped
- Harsh environment
- Ni alloys
- p-MOSFETs
- P-type 4H-SiC
- Silicon carbide
Publication and Content Type
- ref (subject category)
- kon (subject category)
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