4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts

• 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200°C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni stack, Nb-Ni Alloy, Ni and Nb/Ti were investigated, and the Nb/Ni stack silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

4H-SiC

Harsh environment electronics

Nickel

Niobium

Ohmic contact

pMOSFET

Binary alloys

Electric contactors

MOSFET devices

Nickel alloys

Niobium alloys

Ohmic contacts

Silicides

Titanium alloys

Al doped

Harsh environment

Ni alloys

p-MOSFETs

P-type 4H-SiC

Silicon carbide

Publication and Content Type

ref (subject category)

kon (subject category)