Resistance values of aluminum oxide film in situ during anodization of aluminum by fabry-pérot interferometry

• A combination of Fabry-Pérot interferometry and the DC electrochemical method have been used for the first time, in situ, to measure the resistance of aluminum oxide films in 2% sulfuric acid solution. Values of the corresponding resistance of the obtained Al2O3 film thickness were determined during anodization of aluminum (Al) in 2% H2SO4. The obtained resistance values were verified by electrochemical impedance spectroscopy (EIS) and holographic interferometry. The corresponding resistance (2.4 x109 Ohms) to the final thickness of the aluminum oxide film was found in an agreement with the resistance value that was measured by holographic interferometry, 2.54x109 Ohms, in 2% H2SO4. On the contrary, the corresponding resistance (2.4 x109 Ohms) to the final thickness of the aluminum oxide film was found twice the value of the resistance that was measured by the electrochemical impedance spectroscopy (EIS), 1.25x109 Ohms, in 2% H2SO4.

Subject headings

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

Keyword

Alumina

Electrochemical impedance spectroscopy

Holographic interferometry

Optical films

Oxide films

Spectroscopy

Al2O3 films

Aluminum (Al)

Anodizations

ELectrochemical methods

Resistance values

Sulfuric acid solution

Aluminum oxide

Publication and Content Type

ref (subject category)

kon (subject category)