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Electrical characte...
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Shakir, MuhammadKTH,Integrerade komponenter och kretsar
(author)
Electrical characterization of integrated 2-input TTL NAND Gate at elevated temperature, fabricated in bipolar SiC-technology
- Article/chapterEnglish2018
Publisher, publication year, extent ...
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Trans Tech Publications Inc.2018
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-238378
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-238378URI
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https://doi.org/10.4028/www.scientific.net/MSF.924.958DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:kon swepub-publicationtype
Notes
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QC 20181101
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This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage. The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Elahipanah, HosseinKTH(Swepub:kth)u1ve1t1u
(author)
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Hedayati, RahelehKTH(Swepub:kth)u1g0k69x
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Zetterling, Carl-Mikael,1966-KTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns
(author)
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KTHIntegrerade komponenter och kretsar
(creator_code:org_t)
Related titles
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In:International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: Trans Tech Publications Inc., s. 958-9619783035711455
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