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The Effect of H2/Ar Plasma Treatment over Photoconductivity of Sige Nanoparticles Sandwiched between Silicon Oxide Matrix
- Sultan, M. T. (author)
-
- Gudmundsson, Jon Tomas, 1965- (author)
- KTH,Rymd- och plasmafysik,University of Iceland, Iceland
- Manolescu, A. (author)
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- Ciureai, M. L. (author)
- Svavarsson, H. G. (author)
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2018
- 2018
- English.
- In: Proceedings of the International Semiconductor Conference, CAS. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538644829 ; , s. 257-260
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
Subject headings
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Keyword
- HiPIMS
- Hydrogenation
- Magnetron sputtering
- Photoconductivity
- SiGe
- SiO2
Publication and Content Type
- ref (subject category)
- kon (subject category)
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