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The effect of barri...
The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures
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- Akram, Nadeem (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Kjebon, Olle (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Marcinkevičius, Saulius (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Schatz, Richard (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Berggren, Jesper (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Olsson, Fredrik (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Lourdudoss, Sebastian (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 42:7, s. 713-714
- Related links:
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http://ieeexplore.ie...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- Carrier transport; Fabry-Perot laser; InGaAIAs; InGaAsP; Quantum well (QW); Time-resolved photo luminescence
- Photonics
- Fotonik
Publication and Content Type
- ref (subject category)
- art (subject category)
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