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500 degrees C SiC P...
500 degrees C SiC PWM Integrated Circuit
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- Kargarrazi, Saleh (author)
- Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA.
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- Elahipanah, Hossein (author)
- KTH,Integrerade komponenter och kretsar
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- Saggini, Stefano (author)
- DIEGM Univ Udine, I-33100 Udine, Italy.
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- Senesky, Debbie (author)
- Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA.
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- Zetterling, Carl-Mikael, 1966- (author)
- KTH,Integrerade komponenter och kretsar
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Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA Integrerade komponenter och kretsar (creator_code:org_t)
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
- 2019
- English.
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In: IEEE transactions on power electronics. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0885-8993 .- 1941-0107. ; 34:3, s. 1997-2001
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This letter reports on a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator. The circuit has been characterized and shown to be operational in a wide temperature range from 25 to 500 degrees C. The operating frequency of the PWM varies in the range of 160 to 210 kHz and the duty cycle varies less than 17% over the entire temperature range. The proposed PWM is suggested to efficiently and reliably control power converters in extreme environments.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar junction transistor (BJT)
- high-temperature integrated circuit (IC)
- pulsewidth modulator (PWM)
- silicon carbide
Publication and Content Type
- ref (subject category)
- art (subject category)
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