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A SiC BJT-Based Neg...
A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
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- Hussain, Muhammad Waqar, 1985- (author)
- KTH,Elektronik och inbyggda system
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- Elahipanah, Hossein (author)
- KTH,Integrerade komponenter och kretsar,Ascatron AB
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- Zumbro, John E. (author)
- University of Arkansas
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- Rodriguez, Saul (author)
- KTH,Integrerade komponenter och kretsar
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- Malm, B. Gunnar, 1972- (author)
- KTH,Integrerade komponenter och kretsar
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- Mantooth, H. Alan (author)
- University of Arkansas
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- Rusu, Ana, 1959- (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2019
- 2019
- English.
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In: IEEE Journal of the Electron Devices Society. - : Institute of Electrical and Electronics Engineers (IEEE). - 2168-6734. ; 7:1, s. 191-195
- Related links:
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https://kth.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- 4H-SiC BJT
- high-temperature
- LTCC
- negative resistance
- oscillator
Publication and Content Type
- ref (subject category)
- art (subject category)
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