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Broadband CMOS LNAs for IR-UWB receiver

Duo, Xinzhong (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
Zheng, Li-Rong (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
Ismail, Muhammed (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
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Tenhunen, Hannu (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
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 (creator_code:org_t)
New York : IEEE, 2005
2005
English.
In: Norchip 2005, Proceedings. - New York : IEEE. - 1424400643 ; , s. 273-276
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • Two single-ended wideband LNAs for Ultrawide-band receiver have been designed and implemented in 0.18 mu m CMOS technology. The first one, a feed-back LNA, is a two-stage amplifier with a improved feedback loop, which provides high gain and enables the input port to match with 500 in a wide frequency range from 500MHz to 8GHz. The second one, an LC low-pass-filter matched LNA, employs a third-order low pass filter in the input port to match a frequency range from 3GHz to 8GHz. In both of the LNAs, the input stage is a common source amplifier. Inductive shunt peaking is used for maximizing the bandwidth and flatting the gain. In the feed-back LNA, measurements show that the maximum gain is 11.5dB, the 3-dB; bandwidth is from 500MHz to 7GHz, IIP3 is -2.2dBm at 4GHz, the minimum noise figure is around 5.7dB, S11 is less than 8.2dB, and the power consumption is 14mW. In the LC filter matched LNA, the 3-dB bandwidth is from 3GHz to 7.3GHz. The maximum gain is 9.6dB, IIP3 is 0dBm at 4 GHz, the minimum noise figure is 7.6dB, S11 is less than -13.4dB and the power consumption is 23mW.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Bandwidth
CMOS integrated circuits
Gain control
Power amplifiers
Signal receivers
Spurious signal noise
Electronic structure
Elektronstruktur

Publication and Content Type

ref (subject category)
kon (subject category)

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