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Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Brotons-Gisbert, Mauro (author)
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland.
Proux, Raphael (author)
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland.
Picard, Raphael (author)
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland.
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Andres-Penares, Daniel (author)
Univ Valencia, ICMUV, Inst Ciencia Mat, POB 2208546071, Valencia, Spain.
Branny, Artur (author)
KTH,Tillämpad fysik,Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland.
Molina-Sanchez, Alejandro (author)
Univ Valencia, ICMUV, Inst Ciencia Mat, POB 2208546071, Valencia, Spain.;Int Iberian Nanotechnol Lab INL, Av Mestre Jose Veiga, P-4715330 Braga, Portugal.
Sanchez-Royo, Juan F. (author)
Univ Valencia, ICMUV, Inst Ciencia Mat, POB 2208546071, Valencia, Spain.
Gerardot, Brian D. (author)
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland.
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Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland Univ Valencia, ICMUV, Inst Ciencia Mat, POB 2208546071, Valencia, Spain. (creator_code:org_t)
2019-09-02
2019
English.
In: Nature Communications. - : Springer Nature. - 2041-1723. ; 10
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Subject headings

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

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