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Characterizing the ...
Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
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- Liu, Weihua (author)
- Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China.
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- Wu, Fei (author)
- Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China.
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- Zhang, Meng (author)
- Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China.
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- Wang, Yifei (author)
- Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China.
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- Lu, Zhonghai (author)
- KTH,Elektronik och inbyggda system
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- Lu, Xiangfeng (author)
- Beijing Memblaze Technol Co Ltd, Beijing, Peoples R China.
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- Xie, Changsheng (author)
- Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China.
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Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China Elektronik och inbyggda system (creator_code:org_t)
- IEEE, 2019
- 2019
- English.
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In: 2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE). - : IEEE. - 9783981926323 ; , s. 312-315
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.2...
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Abstract
Subject headings
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- 3D charge trap (CT) triple-level cell (TLC) NAND flash gradually becomes a mainstream storage component due to high storage capacity and performance, but introducing a concern about reliability. Fault tolerance and data management schemes are capable of improving reliability. Designing a more efficient solution, however, needs to understand the reliability characteristics of 3D CT TLC NAND flash. To facilitate such understanding, by exploiting a real-world testing platform, we investigate the reliability characteristics including the raw bit error rate (RBER) and the threshold voltage (Vth) shifting features after suffering from variable disturbances. We give analyses of why these characteristics exist in 3D CT TLC NAND flash. We hope these observations can guide the designers to propose high efficient solutions to the reliability problem.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- 3D NAND Flash
- Charge Trap
- Reliability
- Threshold Voltage Shifting
Publication and Content Type
- ref (subject category)
- kon (subject category)
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