Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash

• 3D charge trap (CT) triple-level cell (TLC) NAND flash gradually becomes a mainstream storage component due to high storage capacity and performance, but introducing a concern about reliability. Fault tolerance and data management schemes are capable of improving reliability. Designing a more efficient solution, however, needs to understand the reliability characteristics of 3D CT TLC NAND flash. To facilitate such understanding, by exploiting a real-world testing platform, we investigate the reliability characteristics including the raw bit error rate (RBER) and the threshold voltage (Vth) shifting features after suffering from variable disturbances. We give analyses of why these characteristics exist in 3D CT TLC NAND flash. We hope these observations can guide the designers to propose high efficient solutions to the reliability problem.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Keyword

3D NAND Flash

Charge Trap

Reliability

Threshold Voltage Shifting

Publication and Content Type

ref (subject category)

kon (subject category)