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Electroless Plating of NiFeP Alloy on the Surface of Silicon Photoanode for Efficient Photoelectrochemical Water Oxidation
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- Li, Fusheng, 1985- (author)
- KTH,Molekylär elektronik, CMD,Dalian Univ Technol, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, Inst Energy Sci & Technol,State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Li, Yingzheng (author)
- Dalian Univ Technol, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, Inst Energy Sci & Technol,State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Zhuo, Qiming (author)
- Dalian Univ Technol, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, Inst Energy Sci & Technol,State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- (creator_code:org_t)
- 2020-02-14
- 2020
- English.
- In: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 12:10, s. 11479-11488
- Journal article (peer-reviewed)
Abstract
Subject headings
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- N- type silicon is a kind of semiconductor with a narrow band gap that has been reported as an outstanding light-harvesting material for photoelectrochemical (PEC) reactions. Decorating a thin catalyst layer on the n-type silicon surface can provide a direct and effective route toward PEC water oxidation. However, most of catalyst immobilization methods for reported n-type silicon photoanodes have been based on energetically demanding, time-consuming, and high-cost processes. Herein, a high-performance NiFeP alloy (NiFeP)-decorated n-type micro-pyramid silicon array (n-Si) photoanode (NiFeP/n-Si) was prepared by a fast and low-cost electroless deposition method for light-driven water oxidation reaction. The saturated photocurrent density of NiFeP/n-Si can reach up to similar to 40 mA cm(-2) and a photocurrent density of 15.5 mA cm(-2) can be achieved at 1.23 V-RHE under light illumination (100 mW cm(-2), AM1.5 filter), which is one of the most promising silicon-based photoanodes to date. The kinetic studies showed that the NiFeP on the silicon photoanodes could significantly decrease the interfacial charge recombination between the n-type silicon surface and electrolyte.
Subject headings
- NATURVETENSKAP -- Kemi -- Organisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Organic Chemistry (hsv//eng)
Keyword
- silicon photoanode
- electroless plating
- photoelectrochemical cell
- oxygen evolution reaction (OER)
- solar energy conversion
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Li, Yingzheng
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- Zhao, Yilong
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- Wu, Xiujuan
- Shan, Yu
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