SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:kth-291800"
 

Search: onr:"swepub:oai:DiVA.org:kth-291800" > Optimized electroch...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist
  • Chung, Nguyen XuanKTH,Fotonik,Hanoi Univ Min & Geol, Dept Phys, 18 Pho Vien, Hanoi, Vietnam.,Nanosilicon Group (author)

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

  • Article/chapterEnglish2021

Publisher, publication year, extent ...

  • Elsevier BV,2021
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-291800
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-291800URI
  • https://doi.org/10.1016/j.snb.2020.129323DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20210322
  • Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instance by the current blockage, a high-aspect-ratio nanopore could be beneficial for slowing down the translocation. High-aspect-ratio nanopore on silicon fabrication requires a well-controlled process and is dependent on specific crystal orientation, dopant type and resistivity of substrate. Therefore, an optimized method of processing high-aspect-ratio nanopores is necessary considering the advantage of a silicon membrane being able to be integrated with standard CMOS processing. Here, we present an optimized fabrication method for mass-producing a single and an array of nanopores on a thick (2 mu m) silicon device layer based on a silicon-on-insulator (SOI) wafer. A method of temporal voltage variation is exploited to optimize the etching parameters for the nanopore formation during electrochemical breakdown etching, diameters of nanopores around 12 nm have been achieved. Besides, the correlation between the parameters of etching and nanopore diameter is deduced. The processed high-aspect-ratio nanopore enables applications in single-molecule sensing such as DNA, exosomes, viruses, and protein markers. The developed process is inexpensive, fast and can be batch fabricated.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Gatty, Hithesh KumarKTH,Fotonik,Nanosilicon Group(Swepub:kth)u1rwnc3w (author)
  • Lu, XiKTH,Fotonik,Nanosilicon Group(Swepub:kth)u1i98lfg (author)
  • Zhang, Miao,1985-KTH,Fotonik,Ecole Polytech Fed Lausanne EPFL, Inst Bioengn, Sch Engn, CH-1015 Lausanne, Switzerland.(Swepub:kth)u11pd19n (author)
  • Linnros, Jan,1953-KTH,Fotonik(Swepub:kth)u1t79mee (author)
  • KTHFotonik (creator_code:org_t)

Related titles

  • In:Sensors and actuators. B, Chemical: Elsevier BV3310925-40051873-3077

Internet link

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view