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Dopant incorporatio...
Dopant incorporation in thin strained Si layers implanted with Sb
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- Azarov, Alexander (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Zamani, Atieh (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Radamson, Henry H. (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Vines, L. (author)
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Kuznetsov, A. Yu. (author)
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- Hallén, Anders (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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(creator_code:org_t)
- Elsevier BV, 2010
- 2010
- English.
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 518:9, s. 2474-2477
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.
Keyword
- Strained Si
- Ion implantation
- Sb incorporation
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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