Dopant incorporation in thin strained Si layers implanted with Sb

QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009
The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.

Zamani, AtiehKTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u18l4nyo (author)
Radamson, Henry H.KTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u1g2cqgr (author)
Vines, L. (author)
Kuznetsov, A. Yu. (author)
Hallén, AndersKTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u11ywmz1 (author)
KTHMikroelektronik och tillämpad fysik, MAP (creator_code:org_t)

By the author/editor: Azarov, Alexande ...; Zamani, Atieh; Radamson, Henry ...; Vines, L.; Kuznetsov, A. Yu ...; Hallén, Anders

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