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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02470naa a2200385 4500 | |
| 001 | oai:DiVA.org:kth-29929 | |
| 003 | SwePub | |
| 008 | 110217s2010 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-299292 URI |
| 024 | 7 | a https://doi.org/10.1016/j.tsf.2009.09.1602 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Azarov, Alexanderu KTH,Mikroelektronik och tillämpad fysik, MAP4 aut0 (Swepub:kth)u1us3zzq |
| 245 | 1 0 | a Dopant incorporation in thin strained Si layers implanted with Sb |
| 264 | 1 | b Elsevier BV,c 2010 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009 | |
| 520 | a The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample. | |
| 653 | a Strained Si | |
| 653 | a Ion implantation | |
| 653 | a Sb incorporation | |
| 653 | a TECHNOLOGY | |
| 653 | a TEKNIKVETENSKAP | |
| 700 | 1 | a Zamani, Atiehu KTH,Mikroelektronik och tillämpad fysik, MAP4 aut0 (Swepub:kth)u18l4nyo |
| 700 | 1 | a Radamson, Henry H.u KTH,Mikroelektronik och tillämpad fysik, MAP4 aut0 (Swepub:kth)u1g2cqgr |
| 700 | 1 | a Vines, L.4 aut |
| 700 | 1 | a Kuznetsov, A. Yu.4 aut |
| 700 | 1 | a Hallén, Andersu KTH,Mikroelektronik och tillämpad fysik, MAP4 aut0 (Swepub:kth)u11ywmz1 |
| 710 | 2 | a KTHb Mikroelektronik och tillämpad fysik, MAP4 org |
| 773 | 0 | t Thin Solid Filmsd : Elsevier BVg 518:9, s. 2474-2477q 518:9<2474-2477x 0040-6090x 1879-2731 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-29929 |
| 856 | 4 8 | u https://doi.org/10.1016/j.tsf.2009.09.160 |
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