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  • Rost, Hakon, INorwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, NO-7491 Trondheim, Norway. (author)

A Simplified Method for Patterning Graphene on Dielectric Layers

  • Article/chapterEnglish2021

Publisher, publication year, extent ...

  • 2021-07-30
  • American Chemical Society (ACS),2021
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-300849
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300849URI
  • https://doi.org/10.1021/acsami.1c09987DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20210928
  • The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report mu m scale, few-layer graphene structures formed at moderate temperatures (600-700 degrees C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Reed, Benjamen P.Aberystwyth Univ, Dept Phys, Aberystwyth SY23 3BZ, Dyfed, Wales.;Natl Phys Lab NPL, Hampton Rd, Teddington TW11 0LW, Middx, England. (author)
  • Strand, Frode S.Norwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, NO-7491 Trondheim, Norway. (author)
  • Durk, Joseph A.Aberystwyth Univ, Dept Phys, Aberystwyth SY23 3BZ, Dyfed, Wales. (author)
  • Evans, D. AndrewAberystwyth Univ, Dept Phys, Aberystwyth SY23 3BZ, Dyfed, Wales. (author)
  • Grubisic-Cabo, AntonijaKTH,Tillämpad fysik,Monash Univ, Sch Phys & Astron, Clayton, Vic 3800, Australia.;KTH Royal Inst Technol, Appl Phys, Hannes Alfvens Vag 12, SE-11419 Stockholm, Sweden.(Swepub:kth)u1a8lj3o (author)
  • Wan, GaryUniv Bristol, Sch Phys, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England. (author)
  • Cattelan, MattiaUniv Bristol, Sch Chem, Bristol BS8 1TS, Avon, England.;Elettra Sincrotrone Trieste, Ss 14 Km 163,5 Area Sci Pk, I-34149 Trieste, Italy. (author)
  • Prieto, Mauricio J.Fritz Haber Inst Max Planck Soc, Dept Interface Sci, D-14195 Berlin, Germany. (author)
  • Gottlob, Daniel M.Fritz Haber Inst Max Planck Soc, Dept Interface Sci, D-14195 Berlin, Germany. (author)
  • Tanase, Liviu C.Fritz Haber Inst Max Planck Soc, Dept Interface Sci, D-14195 Berlin, Germany. (author)
  • Caldas, Lucas de SouzaFritz Haber Inst Max Planck Soc, Dept Interface Sci, D-14195 Berlin, Germany. (author)
  • Schmidt, ThomasFritz Haber Inst Max Planck Soc, Dept Interface Sci, D-14195 Berlin, Germany. (author)
  • Tadich, AntonAustralian Synchrotron, Clayton, Vic 3168, Australia. (author)
  • Cowie, Bruce C. C.Australian Synchrotron, Clayton, Vic 3168, Australia. (author)
  • Chellappan, Rajesh KumarNorwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, NO-7491 Trondheim, Norway. (author)
  • Wells, Justin W.Norwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, NO-7491 Trondheim, Norway.;Univ Oslo UiO, Dept Phys, Semicond Phys, NO-0371 Oslo, Norway. (author)
  • Cooil, Simon P.Aberystwyth Univ, Dept Phys, Aberystwyth SY23 3BZ, Dyfed, Wales.;Univ Oslo UiO, Dept Phys, Semicond Phys, NO-0371 Oslo, Norway. (author)
  • Norwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, NO-7491 Trondheim, Norway.Aberystwyth Univ, Dept Phys, Aberystwyth SY23 3BZ, Dyfed, Wales.;Natl Phys Lab NPL, Hampton Rd, Teddington TW11 0LW, Middx, England. (creator_code:org_t)

Related titles

  • In:ACS Applied Materials and Interfaces: American Chemical Society (ACS)13:31, s. 37500-375061944-82441944-8252

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