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Generation-recombin...
Generation-recombination and 1/f noise in carbon nanotube networks
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- Rehman, A. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.
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- Krajewska, A. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.
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- Stonio, B. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.
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- Pavlov, K. (author)
- Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.
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- Cywinski, G. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.
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- Lioubtchenko, Dmitri (author)
- KTH,Mikro- och nanosystemteknik,Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland
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- Knap, W. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.;Univ Montpellier, Lab Charles Coulomb, F-34950 Montpellier, France.;CNRS, UMR 5221, F-34950 Montpellier, France.
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- Rumyantsev, S. (author)
- Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.
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- Smulko, J. M. (author)
- Gdansk Univ Technol, Fac Elect Telecommun & Informat, Dept Metrol & Optoelect, G Narutowicza 11-12, PL-80233 Gdansk, Poland.
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Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland Inst High Pressure Phys PAS, CENTERA Labs, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland. (creator_code:org_t)
- AIP Publishing, 2021
- 2021
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 118:24
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The low-frequency noise is of special interest for carbon nanotubes devices, which are building blocks for a variety of sensors, including radio frequency and terahertz detectors. We studied noise in as-fabricated and aged carbon nanotube networks (CNNs) field-effect transistors. Contrary to the majority of previous publications, as-fabricated devices demonstrated the superposition of generation-recombination (GR) and 1/f noise spectra at a low-frequency range. Although all the devices revealed identical current-voltage characteristics, GR noise was different for different transistors. This effect is explained by the different properties and concentrations of trap levels responsible for the noise. Unexpectedly, exposure of these devices to the atmosphere reduced both the resistance and GR noise due to nanotube's p-doping by adsorbed water molecules from the ambient atmosphere. The presence of the generation recombination noise and its dependences on the environment provides the basis for selective gas sensing based on the noise measurements. Our study reveals the noise properties of CNNs that need to be considered when developing carbon nanotubes-based selective gas sensors.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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