Silicon Heterojunction Microcells

Potter, Maggie M. (author): Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA.

Phelan, Megan E. (author): CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA.

Balaji, Pradeep (author): Arizona State Univ, Solar Power Lab, Tempe, AZ 85287 USA.

Jahelka, Phillip (author): CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA.

Bauser, Haley C. (author): CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA.

Enright, Michael J. (author): Univ Illinois, Dept Chem, Urbana, IL 61801 USA.

Needell, David R. (author): CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA.

Augusto, Andre (author): Arizona State Univ, Solar Power Lab, Tempe, AZ 85287 USA.

Atwater, Harry A. (author): CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA.

Nuzzo, Ralph G. (author): KTH,Yt- och korrosionsvetenskap,Univ Illinois, Dept Chem, Urbana, IL 61801 USA.

Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA. (creator_code:org_t)

2021-09-14
2021
English.
In: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:38, s. 45600-45608

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

We report the design, fabrication, and characterization of silicon heterojunction microcells, a new type of photovoltaic cell that leverages high-efficiency bulk wafers in a microscale form factor, while also addressing the challenge of passivating microcell sidewalls to mitigate carrier recombination. We present synthesis methods exploiting either dry etching or laser cutting to realize microcells with native oxide-based edge passivation. Measured microcell performance for both fabrication processes is compared to that in simulations. We characterize the dependence of microcell open-circuit voltage (V-oc) on the cell area-perimeter ratio and examine synthesis processes that affect edge passivation quality, such as sidewall damage removal, the passivation material, and the deposition technique. We report the highest Si microcell V-oc to date (588 mV, for a 400 mu m x 400 mu m x 80 mu m device), demonstrate V-oc improvements with deposited edge passivation of up to 55 mV, and outline a pathway to achieve microcell efficiencies surpassing 15% for such device sizes.

By the author/editor: Potter, Maggie M ...; Phelan, Megan E.; Balaji, Pradeep; Jahelka, Phillip; Bauser, Haley C.; Glaudell, Rebecc ...; show more...; Went, Cora M.; Enright, Michael ...; Needell, David R ...; Augusto, Andre; Atwater, Harry A ...; Nuzzo, Ralph G.; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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