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Studies on Schottky...
Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone Technique
- Article/chapterEnglish2022
Publisher, publication year, extent ...
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2021-10-13
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Wiley,2022
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printrdacarrier
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LIBRIS-ID:oai:DiVA.org:kth-312303
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-312303URI
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https://doi.org/10.1002/pssb.202100496DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20220530
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β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.
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Ananthu, V.
(author)
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Akshita, K. V.
(author)
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Bhattacharya, S.
(author)
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Varadarajan, E.
(author)
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Ganesamoorthy, S.
(author)
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Moorthy Babu, S.
(author)
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Natarajan, V.
(author)
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Verma, S.
(author)
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Srivatsava, M.
(author)
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Lourdudoss, Sebastian,1953-KTH,Fotonik(Swepub:kth)u16044fg
(author)
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KTHFotonik
(creator_code:org_t)
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In:Physica status solidi. B, Basic research: Wiley259:20370-19721521-3951
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Dhanabalan, D.
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Ananthu, V.
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Akshita, K. V.
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Bhattacharya, S.
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Varadarajan, E.
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Ganesamoorthy, S ...
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Moorthy Babu, S.
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Natarajan, V.
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Verma, S.
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Srivatsava, M.
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Lourdudoss, Seba ...
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- ENGINEERING AND TECHNOLOGY
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and Electrical Engin ...
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Physica status s ...
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Royal Institute of Technology