Search: onr:"swepub:oai:DiVA.org:kth-31248" >
Macroscopic defects...
-
Andersson, Thorvald,1946Chalmers tekniska högskola,Chalmers University of Technology
(author)
Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates
- Article/chapterEnglish2009
Publisher, publication year, extent ...
-
Elsevier BV,2009
-
printrdacarrier
Numbers
-
LIBRIS-ID:oai:DiVA.org:kth-31248
-
https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-31248URI
-
https://doi.org/10.1016/j.mejo.2008.07.065DOI
-
https://research.chalmers.se/publication/114208URI
Supplementary language notes
-
Language:English
-
Summary in:English
Part of subdatabase
Classification
-
Subject category:ref swepub-contenttype
-
Subject category:art swepub-publicationtype
Notes
-
QC 20110323 Symposium on Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications held at the 2008 E-MRS Conference, Strasbourg, FRANCE, MAY, 2008
-
We have used MBE to grow in AlN/GaN superlattices, with different number of periods, on 2.5-mu m-thick MOVPE-GaN templates to study the development of defects such as surface deformation due to strain. After growth the samples were studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), XRD and Fourier transform infrared spectroscopy (FT-IR). The strain increased with the number of quantum wells (QWs) and eventually caused defects such as microcracks visible by optical microscopy at four or more QW periods. High-resolution TEM images showed shallow recessions on the surface (surface deformation) indicating formation of microcracks in the MQW region. The measured intersubband (IS) absorption linewidth from a four period structure was 97 meV, which is comparable with the spectrum from a 10 period structure at an absorption energy of similar to 700 meV. This indicates that the interface quality of the MQW is not substantially affected by the presence of cracks.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
-
Liu, Xinju,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)liuxinyu
(author)
-
Aggerstam, ThomasKTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)(Swepub:kth)u1p9u0ta
(author)
-
Holmström, PetterKTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)(Swepub:kth)u1rcuhvs
(author)
-
Lourdudoss, SebastianKTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)(Swepub:kth)u16044fg
(author)
-
Thylen, LarsKTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)(Swepub:kth)u1odcwum
(author)
-
Chen, Y. L.National Sun Yat-Sen University
(author)
-
Hsieh, C. H.National Sun Yat-Sen University
(author)
-
Lo, I.National Sun Yat-Sen University
(author)
-
Chalmers tekniska högskolaMikroelektronik och tillämpad fysik, MAP
(creator_code:org_t)
Related titles
-
In:Microelectronics Journal: Elsevier BV40:2, s. 360-3620026-2692
Internet link
Find in a library
To the university's database
- By the author/editor
-
Andersson, Thorv ...
-
Liu, Xinju, 1979
-
Aggerstam, Thoma ...
-
Holmström, Pette ...
-
Lourdudoss, Seba ...
-
Thylen, Lars
-
show more...
-
Chen, Y. L.
-
Hsieh, C. H.
-
Lo, I.
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Electrical Engin ...
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Electrical Engin ...
-
and Other Electrical ...
- Articles in the publication
-
Microelectronics ...
- By the university
-
Royal Institute of Technology
-
Chalmers University of Technology