Search: onr:"swepub:oai:DiVA.org:kth-315840" >
Modeling of Thresho...
Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory
-
- Liu, Weihua (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
- Wu, Fei (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
- Zhou, Jian (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
show more...
-
- Zhang, Meng (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
- Yang, Chengmo (author)
- Univ Delaware, Newark, DE 19716 USA.
-
- Lu, Zhonghai (author)
- KTH,Elektronik och inbyggda system
-
- Wang, Yu (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
- Xie, Changsheng (author)
- Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China.
-
show less...
-
Huazhong Univ Sci & Technol, Sch Comp Sci & Technol, Minist Educ China,Wuhan Natl Lab Optoelect, Key Lab Informat Storage Syst,Engn Res Ctr Data S, Wuhan, Peoples R China Univ Delaware, Newark, DE 19716 USA. (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2021
- 2021
- English.
-
In: PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021). - : Institute of Electrical and Electronics Engineers (IEEE). ; , s. 1729-1732
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.2...
-
show less...
Abstract
Subject headings
Close
- 3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve the reliability and performance taking a threshold voltage (Vth) distribution model as the backbone. However, the existing modeling methods are challenged to develop such a Vth distribution model for 3D NAND flash memory. To facilitate it, in this paper, we propose a machine learning-based modeling method. It employs a neural network taking advantage of the existing modeling methods and fully considers multiple interferences and variations in 3D NAND flash memory. Compared with state-of-the-art models, evaluations demonstrate it is more accurate and efficient for predicting Vth distribution.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Inbäddad systemteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Embedded Systems (hsv//eng)
Keyword
- Modeling
- Threshold Voltage Distribution
- 3D NAND flash memory
- ECC
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database