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Robust Low Voltage ...
Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier
- Article/chapterEnglish2009
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LIBRIS-ID:oai:DiVA.org:kth-32342
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32342URI
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https://doi.org/10.1088/0256-307X/26/8/087303DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20110413
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An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i. e., an increase by 9V for +/- 12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100 mu s program/erase at a low voltage of +/- 7V, which is due to fast charge injection rates, i. e., about 2.4 x 10(16) cm(-2) s(-1) for electrons and 1.9 x 10(16) cm(-2) s(-1) for holes.
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Gou, Hong-Yan
(author)
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Huang, Yue
(author)
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Sun, Qing-Qing
(author)
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Ding, Shi-Jin
(author)
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Zhang, Wei
(author)
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Zhang, Shi-LiKTH,Integrerade komponenter och kretsar(Swepub:kth)u1a28qyq
(author)
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KTHIntegrerade komponenter och kretsar
(creator_code:org_t)
Related titles
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In:Chinese Physics Letters26:8, s. 087303-0256-307X1741-3540
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