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Comparative study o...
Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC
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- Esteve, Romain (author)
- KTH,Integrerade komponenter och kretsar
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Schöner, A. (author)
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Reshanov, S.A. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2010
- 2010
- English.
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In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648, s. 829-832
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.
Keyword
- 3C-SiC
- MOS capacitors
- oxide deposition
- post-oxidation
- interface traps
- TZDB.
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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