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An apodized SOI wav...
An apodized SOI waveguide-to-fiber surface grating coupler for single lithography silicon photonics
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- Antelius, Mikael (author)
- KTH,Mikrosystemteknik
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- Gylfason, Kristinn B. (author)
- KTH,Mikrosystemteknik
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- Sohlström, Hans (author)
- KTH,Mikrosystemteknik
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: Optics Express. - 1094-4087. ; 19:4, s. 3592-3598
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Abstract
Subject headings
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- We present the design, fabrication, and characterization of a grating for coupling between a single mode silica fiber and the TE mode in a silicon photonic waveguide on a silicon on insulator (SOI) substrate. The grating is etched completely through the silicon device layer, thus permitting the fabrication of through-etched surface coupled silicon nanophotonic circuits in a single lithography step. Furthermore, the grating is apodized to match the diffracted wave to the mode profile of the fiber. We experimentally demonstrate a coupling efficiency of 35% with a 1 dB bandwidth of 47 nm at 1536 nm on a standard SOI substrate. Furthermore, we show by simulation that with an optimized buried oxide thickness, a coupling efficiency of 72% and a 1 dB bandwidth of 38 nm at 1550 nm is achievable. This is, to our knowledge, the highest simulated coupling efficiency for single-etch TE-mode grating couplers. In particular, simulations show that apodizing a conventional periodic through-etched grating decreases the back-reflection into the waveguide from 21% to 0.1%.
Keyword
- 1550 nm
- Apodizing
- Buried oxide thickness
- Coupling efficiency
- Diffracted waves
- Etched gratings
- Etched surface
- Fiber surface
- Grating couplers
- Mode profiles
- Nanophotonic circuits
- Silica fibers
- Silicon devices
- Silicon photonics
- Silicon-on-insulator substrates
- Single mode
- SOI substrates
- SOI waveguides
- TE mode
- Coupled circuits
- Lithography
- Nanophotonics
- Photonic devices
- Silica
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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