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50 Gb/s hybrid sili...
50 Gb/s hybrid silicon traveling-wave electroabsorption modulator
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- Tang, Yongbo (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Chen, Hui-Wen (author)
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Jain, Siddharth (author)
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Peters, Jonathan D. (author)
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- Westergren, Urban (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Bowers, John E. (author)
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: Optics Express. - 1094-4087. ; 19:7, s. 5811-5816
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 mu m active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.
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