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  • Nocerino, ElisabettaKTH,Material- och nanofysik (author)

Q-dependent electron-phonon coupling induced phonon softening and non-conventional critical behavior in the CDW superconductor LaPt2Si2

  • Article/chapterEnglish2023

Publisher, publication year, extent ...

  • Elsevier BV,2023
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-336308
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-336308URI
  • https://doi.org/10.1016/j.jsamd.2023.100621DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-226648URI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20240209
  • This paper reports the first experimental observation of phonons and their softening on single crystalline LaPt2Si2 via inelastic neutron scattering. From the temperature dependence of the phonon frequency in close proximity to the charge density wave (CDW) q-vector, we obtain a CDW transition temperature of TCDW = 230 K and a critical exponent β = 0.28 ± 0.03. This value is suggestive of a non-conventional critical behavior for the CDW phase transition in LaPt2Si2, compatible with a scenario of CDW discommensuration (DC). The DC would be caused by the existence of two CDWs in this material, propagating separately in the non equivalent (Si1–Pt2–Si1) and (Pt1–Si2–Pt1) layers, respectively, with transition temperatures TCDW−1 = 230 K and TCDW−2 = 110 K. A strong q-dependence of the electron-phonon coupling has been identified as the driving mechanism for the CDW transition at TCDW−1 = 230 K while a CDW with 3-dimensional character, and Fermi surface quasi-nesting as a driving mechanism, is suggested for the transition at TCDW−2 = 110 K. Our results clarify some aspects of the CDW transition in LaPt2Si2 which have been so far misinterpreted by both theoretical predictions and experimental observations and give direct insight into its actual temperature dependence.

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  • Stuhr, U.Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland (author)
  • San Lorenzo, I.Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Noerre Alle 59, DK-2100 Copenhagen O, Denmark, Nørre Allé 59; Department of Applied Science and Technology, Politecnico di Torino, corso Duca degli abruzzi 24 10129 Torino, Italy,Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki 305-0801, Japan (author)
  • Mazza, F.Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Vienna, Austria, Wiedner Hauptstraße 8–10 (author)
  • Mazzone, D. G.Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland (author)
  • Hellsvik, JohanStockholms universitet,KTH,Nordic Institute for Theoretical Physics NORDITA,Parallelldatorcentrum, PDC,Nordiska institutet för teoretisk fysik (Nordita),KTH Royal Institute of Technology, Sweden(Swepub:su)johe6235 (author)
  • Hasegawa, S.Neutron Science Laboratory, Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan (author)
  • Asai, S.Neutron Science Laboratory, Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan (author)
  • Masuda, T.Neutron Science Laboratory, Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan, Chiba; Trans-scale Quantum Science Institute, The University of Tokyo, Tokyo 113-0033, Japan; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki 305-0801, Japan (author)
  • Itoh, S.Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki 305-0801, Japan (author)
  • Minelli, A.Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, United Kingdom (author)
  • Hossain, Z.Department of Physics, Indian Institute of Technology, Kanpur 208016, India (author)
  • Thamizhavel, A.DCMPMS, Tata Institute of Fundamental Research, Mumbai 400005, India (author)
  • Lefmann, K.Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Noerre Alle 59, DK-2100 Copenhagen O, Denmark (author)
  • Sassa, Y.Department of Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden (author)
  • Månsson, Martin,As. Prof.1976-KTH,Material- och nanofysik(Swepub:kth)u1sajjx0 (author)
  • KTHMaterial- och nanofysik (creator_code:org_t)

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  • In:Journal of Science: Advanced Materials and Devices: Elsevier BV8:42468-22842468-2179

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