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The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys

Gebhardt, T. (author)
Rhein Westfal TH Aachen
Music, D. (author)
Rhein Westfal TH Aachen
Ekholm, Marcus (author)
Linköpings universitet,Teoretisk Fysik,Tekniska högskolan
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Abrikosov, Igor (author)
Linköpings universitet,Teoretisk Fysik,Tekniska högskolan
Vitos, Levente (author)
KTH,Tillämpad materialfysik,Royal Institute Technology KTH
Dick, A. (author)
Max Planck Institute Eisenforsch GmbH
Hickel, T. (author)
Max Planck Institute Eisenforsch GmbH
Neugebauer, J. (author)
Max Planck Institute Eisenforsch GmbH
Schneider, J. M. (author)
Rhein Westfal TH Aachen
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 (creator_code:org_t)
2011-05-26
2011
English.
In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 23:24, s. 246003-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Neel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

STACKING-FAULT ENERGY; C ALLOYS; HIGH-STRENGTH; MAGNETIC-STRUCTURES; DISORDERED ALLOYS; TRIP/TWIP STEELS; GAMMA; 1ST-PRINCIPLES; ANTIFERROMAGNETISM; TRANSFORMATION
Condensed matter physics
Kondenserade materiens fysik
TECHNOLOGY

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