Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides

• Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies (hsv//eng)

Keyword

MOLECULAR-BEAM EPITAXY

PASSIVATION

GAAS

INTERFACE

GAAS(001)

SILICON

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)