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Ultrathin (1x2)-Sn ...
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Laukkanen, P.Turun Yliopisto,University of Turku,Tammerfors tekniska universitet,Tampere University of Technology
(author)
Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
- Article/chapterEnglish2011
Publisher, publication year, extent ...
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AIP Publishing,2011
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-35636
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-35636URI
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https://doi.org/10.1063/1.3596702DOI
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https://lup.lub.lu.se/record/2056848URI
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https://research.chalmers.se/publication/143126URI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20110704
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Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Punkkinen, Marko Patrick JohnKTH,Materialvetenskap,Russian Academy of Sciences,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH),Turun Yliopisto,University of Turku(Swepub:kth)u1vmlqqu
(author)
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Lång, J.Turun Yliopisto,University of Turku
(author)
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Tuominen, M.Turun Yliopisto,University of Turku
(author)
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Kuzmin, M.Lunds universitet,Lund University,Turun Yliopisto,University of Turku
(author)
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Tuominen, V.Turun Yliopisto,University of Turku
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Dahl, J.Turun Yliopisto,University of Turku
(author)
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Adell, JohanLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Polish Academy of Sciences(Swepub:cth)adell
(author)
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Sadowski, JanuszLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Polish Academy of Sciences,Chalmers tekniska högskola,Chalmers University of Technology(Swepub:lu)maxl-jsa
(author)
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Kanski, Janusz,1946Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f1xjk
(author)
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Polojärvi, V.Tammerfors tekniska universitet,Tampere University of Technology
(author)
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Pakarinen, J.Teknologian Tutkimuskeskus (VTT),Technical Research Centre of Finland (VTT)
(author)
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Kokko, K.Turun Yliopisto,University of Turku
(author)
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Guina, M.Tammerfors tekniska universitet,Tampere University of Technology
(author)
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Pessa, M.Tammerfors tekniska universitet,Tampere University of Technology
(author)
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Väyrynen, I. J.Turun Yliopisto,University of Turku
(author)
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Turun YliopistoTammerfors tekniska universitet
(creator_code:org_t)
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In:Applied Physics Letters: AIP Publishing98:23, s. 231908-1-231908-30003-69511077-3118
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Laukkanen, P.
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Punkkinen, Marko ...
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Lång, J.
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Tuominen, M.
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Kuzmin, M.
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Tuominen, V.
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Dahl, J.
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Adell, Johan
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Sadowski, Janusz
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Kanski, Janusz, ...
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Polojärvi, V.
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Pakarinen, J.
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Kokko, K.
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Guina, M.
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Pessa, M.
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Väyrynen, I. J.
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Royal Institute of Technology
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