Ion implantation processing and related effects in SiC

QC 20111003
A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.

Hallén, AndersKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u11ywmz1 (author)
Wong-Leung, J. (author)
Janson, Martin S.KTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u12gbokq (author)
Linnarsson, MargaretaKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1x6y4ru (author)
Kuznetsov, A. Yu. (author)
Alfieri, G. (author)
Grossner, U. (author)
Monakhov, E.V. (author)
Kortegaard Nielsen, HanneKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1mopn1t (author)
Jagadish, C. (author)
Grillenberger, J. (author)
KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)

In:Silicon Carbide and Related Materials 2005, Pts 1 and 2, s. 781-7869780878494255

By the author/editor: Svensson, B.G.; Hallén, Anders; Wong-Leung, J.; Janson, Martin S ...; Linnarsson, Marg ...; Kuznetsov, A. Yu ...; show more...; Alfieri, G.; Grossner, U.; Monakhov, E.V.; Kortegaard Niels ...; Jagadish, C.; Grillenberger, J ...; show less...

About the subject

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.