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Device integration ...
Device integration issues towards 10 nm MOSFETs
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- Östling, Mikael (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Malm, B. Gunnar (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- von Haartman, Martin (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Hållstedt, Julius (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Zhang, Zhen (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Hellstrom, Per-Erik (author)
- KTH,Integrerade komponenter och kretsar
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- Zhang, Shili (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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(creator_code:org_t)
- NEW YORK, NY : IEEE, 2006
- 2006
- English.
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In: 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS. - NEW YORK, NY : IEEE. - 142440116X ; , s. 25-30
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high K gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO(2)/Al(2)O(3). Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated, Finally ultra thin body Sol devices with high mobility SiGe channels are demonstrated.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- kon (subject category)
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