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Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC

Alfieri, G (author)
Monakhov, EV (author)
Linnarsson, Margareta K. (author)
KTH,Halvledarmaterial, HMA
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Svensson, BG (author)
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 (creator_code:org_t)
ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD, 2005
2005
English.
In: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD. - 0878499636 ; , s. 365-368
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

DLTS
electron irradiation

Publication and Content Type

ref (subject category)
kon (subject category)

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Alfieri, G
Monakhov, EV
Linnarsson, Marg ...
Svensson, BG
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ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Materials Engine ...
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SILICON CARBIDE ...
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Royal Institute of Technology

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