Determination of nitrogen in silicon carbide by secondary ion mass spectrometry

QC 20111031
The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).

Kazantsev, D. Y. (author)
Kalinina, E. V. (author)
Kovarskii, A. P. (author)
Kossov, V. G. (author)
Hallén, AndersKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1 (author)
Yafaev, R. R. (author)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

By the author/editor: Ber, B. Y.; Kazantsev, D. Y.; Kalinina, E. V.; Kovarskii, A. P.; Kossov, V. G.; Hallén, Anders; show more...; Yafaev, R. R.; show less...

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