Stabilization of Ge-rich defect complexes originating from E centers in Si(1-x)Ge(x):P

• Thermal evolution of vacancy complexes was studied in P-doped ([P] = 10(18) cm(-3)) proton irradiated Si(1-x)Ge(x) with Ge contents of 10%, 20%, and 30% in the range of 250-350 degrees C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4+/-0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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art (subject category)