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Study of two-subban...
Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect
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Lo, Ikai (author)
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Tsai, J. K. (author)
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Gau, M. H. (author)
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Chen, Y. L. (author)
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Chang, Z. J. (author)
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Wang, W. T. (author)
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Chiang, J. C. (author)
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Wang, K. R. (author)
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Chen, C-N (author)
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- Aggerstam, Thomas (author)
- KTH,Electrumlaboratoriet, ELAB
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- Lourdudoss, Sebastian (author)
- KTH,Electrumlaboratoriet, ELAB
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:24, s. 245325-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. The lowest two subbands of the two-dimensional electron gas in the heterointerface were populated. After the low temperature illumination, the electron density increases from 11.99x10(12) cm(-2) to 13.40x10(12) cm(-2) for the first subband and from 0.66x10(12) cm(-2) to 0.94x10(12) cm(-2) for the second subband. The persistent photoconductivity effect (similar to 13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density of 9.40x10(12) cm(-2). We obtained the energy separation between the first and second subbands to be 105 meV.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Lo, Ikai
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Tsai, J. K.
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Gau, M. H.
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Chen, Y. L.
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Chang, Z. J.
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Wang, W. T.
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show more...
-
Chiang, J. C.
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Wang, K. R.
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Chen, C-N
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Aggerstam, Thoma ...
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Lourdudoss, Seba ...
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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Physical Review ...
- By the university
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Royal Institute of Technology