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Etching of Graphene...
Etching of Graphene Devices with a Helium Ion Beam
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- Lemme, Max C., 1970- (author)
- Harvard University, Department of Physics
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Bell, David C. (author)
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Williams, James R. (author)
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Stern, Lewis A. (author)
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Baugher, Britton W. H. (author)
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Jarillo-Herrero, Pablo (author)
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Marcus, Charles M. (author)
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(creator_code:org_t)
- 2009-09-22
- 2009
- English.
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In: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 3:9, s. 2674-2676
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http://arxiv.org/pdf...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- graphene
- transistor
- helium ion microscope
- etching
Publication and Content Type
- ref (subject category)
- art (subject category)
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