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Navigation aids in the search for future high-k dielectrics : Physical and electrical trends
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Engstrom, O. (author)
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Raeissi, B. (author)
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Hall, S. (author)
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Buiu, O. (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Gottlob, H. D. B. (author)
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Hurley, P. K. (author)
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Cherkaoui, K. (author)
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(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- English.
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In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 51:4, s. 622-626
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm. (c) 2007 Elsevier Ltd. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- high-k dielectrics
- dielectric constant
- CMOS
- rare earth oxides
Publication and Content Type
- ref (subject category)
- art (subject category)
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