Search: onr:"swepub:oai:DiVA.org:kth-50513" >
Interface defects i...
Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
-
Hurley, P. K. (author)
-
Cherkaoui, K. (author)
-
O'Connor, E. (author)
-
show more...
-
- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
-
Gottlob, H. D. B. (author)
-
Schmidt, M. (author)
-
Hall, S. (author)
-
Lu, Y. (author)
-
Buiu, O. (author)
-
Raeissi, B. (author)
-
Piscator, J. (author)
-
Engstrom, O. (author)
-
Newcomb, S. B. (author)
-
show less...
-
(creator_code:org_t)
- The Electrochemical Society, 2008
- 2008
- English.
-
In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 155:2, s. G13-G20
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- In this work, we present experimental results examining the energy distribution of the relatively high (> 1 X 10(11) cm(-2)) electrically active interface defects which are commonly observed in high-dielectric-constant (high-k) metal-insulator-silicon systems during high-k process development. This paper extends previous studies on the Si(100)/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, lanthanum silicate (LaSiOx), and Gd2O3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H-2/N-2 annealing following the gate stack formation, reveals a peak density (similar to 2 X 10(12) cm(-2) eV(-1) to similar to 1 X 10(13) cm(-2) eV(-1)) at 0.83-0.92 eV above the silicon valence bandedge for the HfO2, LaSiOx, and Gd2O3 thin films on Si (100). The characteristic peak in the interface state density (0.83-0.92 eV) is obtained for samples where no interface silicon oxide layer is observed from transmission electron microscopy. Analysis suggests silicon dangling bond (P-bo) centers as the common origin for the dominant interface defects for the various Si(100)/SiOx/high-k/metal gate systems. The results of forming gas (H-2/N-2) annealing over the temperature range 350-555 degrees C are presented and indicate interface state density reduction, as expected for silicon dangling bond centers. The technological relevance of the results is discussed. (c) 2007 The Electrochemical Society.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Hurley, P. K.
-
Cherkaoui, K.
-
O'Connor, E.
-
Lemme, Max C., 1 ...
-
Gottlob, H. D. B ...
-
Schmidt, M.
-
show more...
-
Hall, S.
-
Lu, Y.
-
Buiu, O.
-
Raeissi, B.
-
Piscator, J.
-
Engstrom, O.
-
Newcomb, S. B.
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Nano technology
- Articles in the publication
-
Journal of the E ...
- By the university
-
Royal Institute of Technology