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Mobility in graphen...
Mobility in graphene double gate field effect transistors
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Echtermeyer, T. J. (author)
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Baus, M. (author)
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Szafranek, B. N. (author)
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Bolten, J. (author)
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Schmidt, M. (author)
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Wahlbrink, T. (author)
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Kurz, H. (author)
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(creator_code:org_t)
- PERGAMON-ELSEVIER SCIENCE LTD, 2008
- 2008
- English.
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In: Solid-State Electronics. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1101 .- 1879-2405. ; 52:4, s. 514-518
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http://www.sciencedi...
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https://kth.diva-por... (primary) (Raw object)
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http://arxiv.org/pdf...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. (c) 2007 Elsevier Ltd. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- graphene
- field effect transistor
- mobility
- SOI
Publication and Content Type
- ref (subject category)
- art (subject category)
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