Mobility in graphene double gate field effect transistors

This is the author’s version of a work that was accepted for publication in Solid-State Electronics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid-State Electronics, VOL 52, ISSUE 4, (20 February 2008) DOI:10.1016/j.sse.2007.10.054 QC 20120209
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. (c) 2007 Elsevier Ltd. All rights reserved.

In:Solid-State Electronics: PERGAMON-ELSEVIER SCIENCE LTD52:4, s. 514-5180038-11011879-2405

By the author/editor: Lemme, Max C., 1 ...; Echtermeyer, T. ...; Baus, M.; Szafranek, B. N.; Bolten, J.; Schmidt, M.; show more...; Wahlbrink, T.; Kurz, H.; show less...

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