Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

• This paper reports on the influence of forming gas annealing (5%H-2/95%N-2) over the temperature range 350 degrees C-550 degrees C on the density of electrically active interface states in Si(100)/SiO2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the P-b0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 degrees C and 400 degrees C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 degrees C-550 degrees C. The effect of the cooling ambient for the forming gas anneal (N-2 or H-2/N-2) is also reported.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

high dielectric constant thin films

Si(100)/SiO2/HfO2/TiN gate stacks

interface states

forming gas annealing

Publication and Content Type

ref (subject category)

art (subject category)