Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

• Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

high-k

rare earth oxide

CMOS

metal gate

Publication and Content Type

ref (subject category)

art (subject category)