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Gentle FUSI NiSi metal gate process for high-k dielectric screening
- Gottlob, H. D. B. (author)
-
- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
- Schmidt, M. (author)
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- Echtermeyer, T. J. (author)
- Mollenhauer, T. (author)
- Kurz, H. (author)
- Cherkaoui, K. (author)
- Hurley, P. K. (author)
- Newcomb, S. B. (author)
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- (creator_code:org_t)
- Elsevier BV, 2008
- 2008
- English.
- In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 85:10, s. 2019-2021
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In this paper, a process flow well suited for screening of novel high-k dielectrics is presented. In vacuo silicon capping of the dielectrics excludes process and handling induced influences especially if hygroscopic materials are investigated. A gentle, low thermal budget process is demonstrated to form metal gate electrodes by turning the silicon capping into a fully silicided nickel silicide. This process enables the investigation of rare earth oxide based high-k dielectrics and specifically their intrinsic material properties using metal oxide semiconductor (MOS) capacitors. We demonstrate the formation of nickel monosilicide electrodes which show smooth interfaces to the lanthanum- and gadolinium-based high-k oxide films. The dielectrics have equivalent oxide thicknesses of EOT = 0.95 nm (lanthanum silicate) and EOT = 0.6 nm (epitaxial gadolinium oxide).
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- FUSI NiSi
- High-k
- Ultrathin dielectric
- Material screening
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Cherkaoui, K.
- Hurley, P. K.
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