Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates

• A dual gate metal oxide semiconductor field effect transistor (MOSFET) with electrically variable shallow junctions (EJ-MOSFET) has been fabricated on silicon on insulator (SOI) substrates. This kind of transistor allows testing the limits of scalability at relaxed process requirements. Transistor gate lengths down to 12 run have been structured by electron beam lithography (EBL) and specific etching processes. The coupling of the upper gate to the inner transistor is carefully investigated.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

EJ-MOSFET

12 nm gate length

shallow junction

SOI

HSQ

electron beam lithography

Publication and Content Type

ref (subject category)

art (subject category)