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Tungsten work funct...
Tungsten work function engineering for dual metal gate nano-CMOS
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Efavi, J K (author)
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Mollenhauer, T (author)
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Wahlbrink, T (author)
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Gottlob, H D B (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Kurz, H (author)
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(creator_code:org_t)
- Springer Science and Business Media LLC, 2005
- 2005
- English.
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In: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 16:7, s. 433-436
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A buffer layer technology for work function engineering of tungsten for dual metal gate Nano-CMOS is investigated. For the first time, tungsten is used as a p-type gate material using 1 nm of sputtered Aluminum Nitride (AlNx) as a buffer layer on silicon dioxide (SiO2) gate dielectric. A tungsten work function of 5.12 eV is realized using this technology in contrast to a mid-gap value of 4.6 eV without a buffer layer. Device characteristics of a p-MOSFET on silicon-on-insulator (SOI) substrate fabricated with this technology are presented.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- Aluminum nitride; CMOS integrated circuits; Composition effects; Dielectric devices; Energy gap; MOSFET devices; Nanotechnology; Silica; Silicon on insulator technology
Publication and Content Type
- ref (subject category)
- art (subject category)
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