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Introduction of cry...
Introduction of crystalline high-k gate dielectrics in a CMOS process
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Gottlob, H D B (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Mollenhauer, T (author)
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Wahlbrink, T (author)
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Efavi, J K (author)
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Kurz, H (author)
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Stefanov, Y (author)
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Haberle, K (author)
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Komaragiri, R (author)
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Ruland, T (author)
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Zaunert, F (author)
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Schwalke, U (author)
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(creator_code:org_t)
- Elsevier BV, 2005
- 2005
- English.
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In: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 351:21-23, s. 1885-1889
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- In this work we report on methods to introduce crystalline rare-earth (RE) oxides with high (k > 3.9) dielectric constants (high-k) in a CMOS process flow. Key process steps compatible with crystalline praseodymium oxide (Pr2O3) high-k gate dielectric have been developed and evaluated in metal-oxide-semiconductor (MOS) structures and n-MOS transistors fabricated in an adapted conventional bulk process. From capacitance-voltage measurements a dielectric constant of k = 36 has been calculated. Furthermore an alternative process sequence suitable for the introduction of high-k material into silicon on insulator (SOI) MOS-field-effect-transistors (MOSFET) is presented. The feasibility of this process is shown by realization of n- and p-MOSFETs with standard SiO2 gate dielectric as demonstrator. SiO2 gate dielectric can be replaced by crystalline RE-oxides in the next batch fabrication.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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- ref (subject category)
- art (subject category)
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- By the author/editor
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Gottlob, H D B
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Lemme, Max C., 1 ...
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Mollenhauer, T
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Wahlbrink, T
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Efavi, J K
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Kurz, H
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show more...
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Stefanov, Y
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Haberle, K
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Komaragiri, R
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Ruland, T
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Zaunert, F
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Schwalke, U
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
- Articles in the publication
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Journal of Non-C ...
- By the university
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Royal Institute of Technology