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Introduction of cry...
Introduction of crystalline high-k gate dielectrics in a CMOS process
- Article/chapterEnglish2005
Publisher, publication year, extent ...
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Elsevier BV,2005
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-50539
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-50539URI
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https://doi.org/10.1016/j.jnoncrysol.2005.04.032DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20120229
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In this work we report on methods to introduce crystalline rare-earth (RE) oxides with high (k > 3.9) dielectric constants (high-k) in a CMOS process flow. Key process steps compatible with crystalline praseodymium oxide (Pr2O3) high-k gate dielectric have been developed and evaluated in metal-oxide-semiconductor (MOS) structures and n-MOS transistors fabricated in an adapted conventional bulk process. From capacitance-voltage measurements a dielectric constant of k = 36 has been calculated. Furthermore an alternative process sequence suitable for the introduction of high-k material into silicon on insulator (SOI) MOS-field-effect-transistors (MOSFET) is presented. The feasibility of this process is shown by realization of n- and p-MOSFETs with standard SiO2 gate dielectric as demonstrator. SiO2 gate dielectric can be replaced by crystalline RE-oxides in the next batch fabrication.
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Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy
(author)
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Mollenhauer, T
(author)
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Wahlbrink, T
(author)
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Efavi, J K
(author)
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Kurz, H
(author)
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Stefanov, Y
(author)
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Haberle, K
(author)
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Komaragiri, R
(author)
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Ruland, T
(author)
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Zaunert, F
(author)
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Schwalke, U
(author)
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AMO GmbH, AMICA, Aachen, Germany
(creator_code:org_t)
Related titles
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In:Journal of Non-Crystalline Solids: Elsevier BV351:21-23, s. 1885-18890022-30931873-4812
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Gottlob, H D B
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Lemme, Max C., 1 ...
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Mollenhauer, T
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Wahlbrink, T
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Efavi, J K
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Kurz, H
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Stefanov, Y
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Haberle, K
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Komaragiri, R
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Ruland, T
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Zaunert, F
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Schwalke, U
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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Journal of Non-C ...
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Royal Institute of Technology