Introduction of crystalline high-k gate dielectrics in a CMOS process

QC 20120229
In this work we report on methods to introduce crystalline rare-earth (RE) oxides with high (k > 3.9) dielectric constants (high-k) in a CMOS process flow. Key process steps compatible with crystalline praseodymium oxide (Pr2O3) high-k gate dielectric have been developed and evaluated in metal-oxide-semiconductor (MOS) structures and n-MOS transistors fabricated in an adapted conventional bulk process. From capacitance-voltage measurements a dielectric constant of k = 36 has been calculated. Furthermore an alternative process sequence suitable for the introduction of high-k material into silicon on insulator (SOI) MOS-field-effect-transistors (MOSFET) is presented. The feasibility of this process is shown by realization of n- and p-MOSFETs with standard SiO2 gate dielectric as demonstrator. SiO2 gate dielectric can be replaced by crystalline RE-oxides in the next batch fabrication.

Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (author)
Mollenhauer, T (author)
Wahlbrink, T (author)
Efavi, J K (author)
Kurz, H (author)
Stefanov, Y (author)
Haberle, K (author)
Komaragiri, R (author)
Ruland, T (author)
Zaunert, F (author)
Schwalke, U (author)
AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)

In:Journal of Non-Crystalline Solids: Elsevier BV351:21-23, s. 1885-18890022-30931873-4812

By the author/editor: Gottlob, H D B; Lemme, Max C., 1 ...; Mollenhauer, T; Wahlbrink, T; Efavi, J K; Kurz, H; show more...; Stefanov, Y; Haberle, K; Komaragiri, R; Ruland, T; Zaunert, F; Schwalke, U; show less...

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