Supercritical drying process for high aspect-ratio HSQ nano-structures

• Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

supercritical resist drying

HSQ

high-resolution electron beam lithography

aspect ratio

Publication and Content Type

ref (subject category)

art (subject category)